By Yi Cui, Xiangfeng Duan, Yu Huang, Charles M. Lieber (auth.), Zhong Lin Wang (eds.)
Volume 1, steel and Semiconductor Nanowires covers a variety of fabrics platforms, from noble metals (such as Au, Ag, Cu), unmarried aspect semiconductors (such as Si and Ge), compound semiconductors (such as InP, CdS and GaAs in addition to heterostructures), nitrides (such as GaN and Si3N4) to carbides (such as SiC). the target of this quantity is to hide the synthesis, houses and machine purposes of nanowires in response to steel and semiconductor fabrics. the amount begins with a evaluate on novel digital and optical nanodevices, nanosensors and good judgment circuits which have been outfitted utilizing person nanowires as development blocks. Then, the theoretical history for electric homes and mechanical houses of nanowires is given. The molecular nanowires, their quantized conductance, and steel nanowires synthesized by means of chemical approach may be brought subsequent. eventually, the amount covers the synthesis and houses of semiconductor and nitrides nanowires.
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Extra info for Nanowires and Nanobelts: Materials, Properties and Devices. Volume 1: Metal and Semiconductor Nanowires
For example, the energy band offsets in Si-Ge heterostructures produce internal fields that drive charge carrier redistribution, which can enable high mobility devices. Single crystal Ge NWs were defined via gold nanocluster directed axial growth, and then boron-doped p-Si shells were grown by homogeneous CVD (see Methods). Bright field TEM images (Fig. 16a) reveal a core-shell structure that is consistent with Ge-core (dark) and Si-shell (light) structure, and we confirmed this assignment by elemental mapping (Fig.
Adapted from  . 34 Cui et al. ~/\:: ~~m A: ~m ~ ~ ~m ~ . 4 ! 45 50 Diameter (nm) Fig. 26. (a) PL spectra taken at RT from single InP NWs with nominal diameters of 50, 20, 15, and lO nm. (b) Single NW PL spectra at 7 K. (c) Emission energy maxima at RT versus NW diameter. (d) Emission energy maximum at 7 K. PL spectra in (a) and (b) were normalized to the peak maxima and shifted upward for clarity. The experimental data in (c) and (d) were fit using the EMM (solid line). Adapted from . reduced below 20 nm, in agreement with the concept of quantum confinement.
To potential applications in nanoscale electronics, optoelectronics and other areas. In the section, we will focus on fundamental electronic and optoelectronic properties of individual NW structures. 1. Electrical transport in individual nanowires Electrical transport measurements can provide information about the electronic structure and the behaviors of carriers under electric field in nanoscale materials. One powerful configuration for studying electrical transport is the field effect transistor (FET).
Nanowires and Nanobelts: Materials, Properties and Devices. Volume 1: Metal and Semiconductor Nanowires by Yi Cui, Xiangfeng Duan, Yu Huang, Charles M. Lieber (auth.), Zhong Lin Wang (eds.)